Our Services

We provide personalised support and expert guidance to all our users, no matter your experience level. We strive to ensure that our users’ needs are met at every stage of their research by providing tailored solutions and excellent customer service. We offer a wide range of Silicon Photonics platforms all available via scheduled multi-project-wafer runs or bespoke fabrication batches available on-demand.

Multi-project-wafer (MPW) service on a variety of platforms

220 nm silicon-on-insulator (passive devices / active devices)

Our team has an exemplary track record in silicon-based modulators having demonstrated several world firsts, including the first 1 Gb/s carrier depletion modulator in 2004, now the industry standard, and the first 50 Gb/s carrier depletion modulator in 2012. In 2020, we demonstrated a fully integrated silicon MZI modulator with CMOS driver operating at 100 Gb/s OOK.

Technology
details
Si etch depths: 70 nm, 120 nm & 220 nm
TiN based thermal phase shifters
4 implantation layers for active device batches
High resistivity handle wafer for improved RF performance (750 ohm.cm)
Performance (TE single mode @ λ = 1.55 µm):

Rib waveguide propagation loss: < 3 dB/cm
Strip waveguide propagation loss: < 4 dB/cm
Grating coupler loss: 5-6 dB/grating
Phase shifter efficiency (MZI): < 20 mW/π
Modulator performance (1.8 mm long MZI based carrier depletion):

  • Speed @ 2 V dual drive: > 40 Gb/s
  • Insertion loss @ 2 V dual drive: < 5 dB
  • Extinction ratio @ 2 V dual drive: > 3 dB
Logistics Design area options: 11.47 x 4.9 mm² / 5.5 x 4.9 mm²
Delivery timeframe: < 3 months

340 nm silicon-on-insulator (passive devices)

Our flexibility enables users to add customised steps into all of our MPW batches. For example, in this platform a user could add e-beam written apodised grating couplers capable of coupling efficiencies of < 1 dB. A user could also add customised etch depths or sensing windows in the top cladding layer.

Technology
details

Si etch depths: 140 nm & 340 nm
TiN based thermal phase shifters

Performance (TE single mode @ λ = 1.55 µm):

Rib waveguide propagation loss: < 0.8 dB/cm
(shallow etch)
Strip waveguide propagation loss: < 3.5 dB/cm
Grating coupler loss: 5-6 dB/grating
Phase shifter efficiency (MZI): < 20 mW/π

Logistics

Design area options: 11.47 x 4.9 mm² / 5.5 x 4.9 mm²
Delivery timeframe: < 3 months

500 nm silicon-on-insulator (passive devices)

All of our platforms are supported by an open source process design kit (PDK), which is available to download in GDSII format via our website or is accessible via Luceda Photonics’ IPKISS software.

Technology
details

Si etch depths: 160 nm & 300 nm
TiN based thermal phase shifters

Performance (TE single mode @ λ = 1.55 µm):

Rib waveguide propagation loss: < 3 dB/cm
Grating coupler loss: 5-6 dB/grating
Phase shifter efficiency (MZI): < 20 mW/π

Logistics

Design area options: 11.47 x 4.9 mm² / 5.5 x 4.9 mm²
Delivery timeframe: < 3 months

Silicon nitride

The SiN platform extends the available operating wavelengths of CORNERSTONE’s portfolio into the visible range. This is of particular interest for quantum photonics technologies. The lower refractive index of SiN also makes it less susceptible to fabrication tolerances and temperature fluctuations relative to Si.

Technology
details

Platform: 300 nm SiN / 3 μm BOX
SiN etch depth: 300 nm

Performance (TE single mode @ λ = 1.55 µm):

Strip waveguide propagation loss: < 0.5 dB/cm
Grating coupler loss: < 10 dB/grating

Logistics

Design area: 11.47 x 15.45 mm²
Delivery timeframe:
< 3 months

Suspended-silicon

The SOI BOX layer becomes highly absorbing at wavelengths above ~3.8 μm. CORNERSTONE’s suspended-Si platform alleviates this problem by locally removing the BOX layer underneath suspended waveguides to extend the transparency of the SOI platform up to ~8 μm.

Technology
details

Platform: 500 nm Si / 3 μm BOX
Si etch depth:
500 nm, followed by HF etching for undercutting / suspension

Performance (TE single mode @ λ = 3.8 µm):

Waveguide propagation loss: < 3 dB/cm

Logistics

Design area options: 11.47 x 4.9 mm² / 5.5 x 4.9 mm²
Delivery timeframe: < 2 months

Germanium – on – silicon

The Ge-on-Si platform supports wavelengths up to ~14 μm, which makes it well suited for a broad variety of applications including environmental, biological, chemical and pharmaceutical sensing, industrial process control, toxin and contaminant detection, point-of care diagnostics and astrophysics.

Technology
details

Platform: 3 μm Ge-on-Si (n-type)
Ge etch depth: 1.8 μm
Edge couplers formed by custom dicing process

Performance (TE single mode):

Waveguide propagation loss: < 3 dB/cm @ λ = 6.0μm, < 8.5 dB/cm @ λ = 9.9 μm

Logistics

Design area: 11.47 x 15.45 mm²
Delivery timeframe: < 2 months

Bespoke fabrication batches with a tape-out date to suit your requirements

Electronic-photonic integration via flip-chip bonding

Design consultancy

Training courses including the chance to spend a day in our cleanrooms

Lithography

We offer an affordable and efficient deep-UV projection lithography service for 8” (200 mm) Si based substrates. Our deep-UV lithography service is capable of patterning 200 nm features, with a maximum design area of 24 mm x 32 mm.

We offer 3 different resist thicknesses, all using a positive tone resist (exposed areas are developed): 680 nm, 1 µm, 1.3 µm.

Check out the lithography process in action:

 

How to access our Lithography Service

Please download the design rules. If you would like to proceed, you will need complete our form to order a reticle and when you are ready to submit a job, you can do so via the DUV job submission form.

Flip-Chip Bonding

We offer a flip-chip bonding service for electronic and photonic integration. As this is a bespoke service, please contact us. with more details of your requirements once you have checked our design rules.

Get in touch

If you would like to discuss any of our services, then please do not hesitate to contact us.